湖南科技大学周少敏,中科院理化技术所李述汤,张晓宏,孟祥敏等人自我抄袭


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送交者: james_hussein_bond 于 2009-03-10, 19:51:30:

湖南科技大学周少敏教授,中科院理化技术所李述汤主任,张晓宏副主任,孟祥敏研究员等人自我抄袭。下面两文整段整段相同。较晚的第二篇文章没有引用第一篇,说明抄袭属于故意性质。
第一篇
引用:
Micron Volume 36, Issue 1, January 2005, Pages 55-59
Large-scale fabrication and characterization of Cd-doped ZnO nanocantilever arrays
Shao-Min Zhou, Xiang-Min Meng, Xiao-Hong Zhang (Corresponding Author), Xia Fan, Kai Zou, Shi-Kang Wu and Shuit-Tong Lee

摘要
引用:
We demonstrate bulk synthesis of highly crystalline Cd-doped ZnO nanocantilever arrays (CZNAs) using Cd and Zn powders at 600 °C, which is characterized via scanning electron microscopy, powder X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy, selected area electron diffraction, and high resolution TEM. The results show that the as-prepared CZNAs have diameters of about 15–50 nm, and lengths up to 400 nm and the corresponding process of growth is suggested for
conventional vapor solid mechanism.

第二篇
引用:
Materials Research Bulletin
Volume 41, Issue 2, 2 February 2006, Pages 340-346
Fabrication of large-scale ultra-fine Cd-doped ZnO nanowires
Shao-Min Zhou (Corresponding Author), Xiao-Hong Zhang, Xiang-Min Meng, Shi-Kang Wu and Shuit-Tong Lee

摘要
引用:
We demonstrate bulk synthesis of highly crystal Cd-doped ZnO nanowires by using (Cd + Zn) powders at 600 °C. These mass ultra-fine ZnO nanowires with about 0%, 1%, 4% and 8% Cd so obtained have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and high-resolution TEM (HRTEM). They have the uniform diameter of about 20 nm and several hundred microns in length. The growth of the as-synthesized nanowires is suggested for self-catalyzed vapor–liquid–solid.

两篇文章雷同的部分:
引言:
第一篇
引用:
... As well known, doping in semiconductor with selective elements offers an effective approach to adjust their electrical, optical, and magnetic properties, which is crucial for their practical applications (Geng et al., 2003; Kong et al., 2004; Ronning et al., 2004; Jie et al., 2004). ...

第二篇
引用:
... As is well known, doping in semiconductor with selective elements offers an effective approach to adjust their electrical, optical, and magnetic properties, which is crucial for practical applications [18-20]. ...

实验:
第一篇
引用:
In a typical experiment, a small quartz boat was firstly cleaned using a standard treatment in piranha solution (10%H2O2C20%H2SO4), and rinsed with deionized water. Then Cd powders (0.8 g) were placed at a quarter of the boat and then Zn powders (5.0 g) were added in a half of the boat. The boat was covered with an alumina plate to maintain high metal vapor pressure and then inserted into a half of a large quartz tube in a horizontal tube furnace. The system was quickly heated to 600 C under 50 sccm oxygen gas flow at a pressure of about 10-3 Torr for 1 h and then cooled to room temperature. Subsequently, large-scale paleyellow wool-like products were seen in the end of the large quartz tube.

第二篇
引用:
In a typical experiment, two small quartz boats were firstly cleaned using standard treatment in Piranha solution (10% H2O2 + 20% H2SO4), and rinsed with deionized water. Zn powders (5.0 g) were placed at a quarter of one boat and then Cd powders (0, 0.08, 0.21 or 0.80 g) were each respectively added in half of the boat, which was then covered with the other empty boat to maintain a high local pressure. The two boats were inserted into half of a large quartz-tube in a horizontal tube furnace. The system was quickly heated to 600 C under 50 sccm oxygen gas flow at a pressure of about 10-2 Torr for 1 h and then cooled to room temperature. Subsequently, large-scale pale-yellow wool-like products were seen in the inner end of the large quartz tube.

注意这里有一个很奇怪的区别。第一个实验中氧气压是10^-3 Torr,第二个是10^-2 Torr。其它实验细节都相同。作者没有解释为什么氧气压应该不同。给人感觉好像氧气压从一个实验到下一个实验可以随意变。
结果与讨论:
第一篇
引用:
A key question here is why the ZnCCd powders are formed in the form of single-crystalline CZNA, just similar to the synthesis of Cd-doped ZnS whiskers reported by our research group (Zhou et al., 2003). The formation process of ZnCdO composition could be a simple two-step-reaction from a chemical reaction point of view, that is,
2Zn + O2 -> 2ZnO (1)
2Cd + O2 -> 2CdO (2)
2(Cd + Zn)eutectoid + O2 -> 2ZnCdO(ID) (3)
However, the formation of the ZnCdO CZNAs (that is, reaction (3)) would involve a very complicated process. Because of the fact that the ZnCdO CZNAs can be formed only in a place away from the centre of the tube furnace (lower temperature range), we can reasonably speculate the CZNA formation process as follows:

第二篇
引用:
A key question here is why the Zn powders and Cd powders are formed in the form of singlecrystalline Cd-doped ZnO nanowire, just similar to the syntheses of GaN nanowires [6,7] and CdxZn1 xS whiskers [9] of our research group. The formation process of ZnCdO composition could be simple onestep- reaction from a chemical reaction point of view, that is,
2(Cd + Zn)(eutectoid[22,23]) O2 -> 2ZnCdO. (1)
However, the formation of ZnCdO nanowire would involve a very complicated process. Because of the fact that the nanowires can only be formed below a certain process temperature (600 8C), and only in a place away from the center of the tube furnace (lower temperature range), we can reasonably speculate the nanowire formation process as follows:

后面的分析就不一样了。

更加恶劣的是,第二篇文章25篇参考文献,至少有9篇是他们自己的。既然明显在给自己加引用率,为什么不把前一年密切相关的工作引上呢?如果编辑看到了第一篇文章,还会让第二篇发表吗?




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